Preliminary Survey Report: Control Technology for Gallium Arsenide Processing at Morgan Semiconductor Division, Garland, Texas.

Details

• Personal Author:
  Lenihan KL
• Description:
  A walk through survey was made of the Morgan Semiconductor Facility (SIC-3674) in Garland, Texas to evaluate control technology for gallium-arsenide (1303000) dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic (7440382) residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers. A new system was being designed for cleaning the crystal pullers where a permanent vacuum would be placed in the puller to provide local exhaust. A dry box was employed in the Horizontal Bridgeman process to break up the gallium- arsenide crystal prior to loading the quartz ampoules. Thermocouple failure was identified as a major cause of emissions from the gallium-arsenide synthesis operation and subsequently a change was made in the preventive maintenance schedules to replace thermocouples more frequently. Work practices also contributed to lower worker exposures. Every evening the crystal pulling area and the crystal sawing areas were wet mopped and all surfaces wet wiped three times a week to prevent buildup of arsenic residues. A continuous monitoring program for arsine was carried out. Medical monitoring was performed on an annual basis. Workers wore appropriate protective equipment for crystal pulling and polishing activities. The author recommends this facility for an in depth survey to evaluate the control measures. [Description provided by NIOSH]
• Content Notes:
  in NTRL, no pdf
• Subjects:
  Arsenic Inorganic Chemicals Occupational Health Poisoning Preceptorship Safety Semiconductors
• Keywords:
  NIOSH-Author; NIOSH-Survey; Field-Study; Arsenic-compounds; Arsenic-poisoning; Semiconductors; Region-6
• Series:
  Engineering and Physical Hazards Survey Reports
• Publisher:
  National Institute for Occupational Safety and Health
• Document Type:
  Text
• Genre:
  Field Study ; Standards
• Place as Subject:
  Ohio ; OSHA Region 5 ; OSHA Region 6 ; Texas
• CIO:
  National Institute for Occupational Safety and Health (NIOSH)
• Division:
  DPSE - Division of Physical Sciences and Engineering
• Topic:
  Workplace Safety & Health
• Location:
  North America
• Pages in Document:
  1-8
• NIOSHTIC Number:
  nn:00169498
• NTIS Accession Number:
  PB87206603
• Citation:
  Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control, National Institute for Occupational Safety and Health, ECTB 163-15a, 1987 Mar; :1-8
• CAS Registry Number:
  Arsenic (CAS RN 7440-38-2) ; Gallium arsenide (CAS RN 1303-00-0)
• Federal Fiscal Year:
  1987
• Peer Reviewed:
  False
• NAICS and SIC Codes:
  3674 - Semiconductors and related devices - (SIC)
• Source Full Name:
  National Institute for Occupational Safety and Health
• Collection(s):
  National Institute for Occupational Safety and Health
• Main Document Checksum:
  urn:sha-512:7dc847c09aedf140bc731323e8446b4703641ae07d6ad9e7b7238120dab30b8f7dcaa9b938d34d035f87873a0fe7fec262d5d13dcaf290925445e82b6de3b57d
• Download URL:
  https://stacks.cdc.gov/view/cdc/233782/cdc_233782_DS1.pdf
• File Type:
  [PDF - 168.02 KB ]