In-depth survey report: control technology for gallium arsenide processing at Morgan Semiconductor, Garland, Texas.

Details

• Personal Author:
  Jones JH ; Lenihan KL ; Sheehy JW
• Description:
  A survey was conducted to document and evaluate effective technologies for controlling hazardous exposures at Morgan Semiconductor (SIC-3674), Garland, Texas. The facility produced gallium-arsenide (GaAs) wafers, and GaAs wafers with epitaxial layers of gallium-aluminum-arsenide. Five process areas evaluated for arsenic (7440382) showed the personal exposures above the NIOSH recommended exposure limit of 2 micrograms/cubic meter and the OSHA action level of 5 micrograms/cubic meter. The cut off room had extremely high levels of arsenic, but the operator did wear an air supplied respirator. During LEC cleaning, the personal arsenic concentrations were higher. All arsine (7784421) - arsenic exposures in epitaxy were below the detection limit of the sampling and analytical method. Relatively high levels of arsenic surface contamination were found on the surfaces of the LEC puller. Area hydrogen-chloride (7647010) air concentrations in the ampoule loading room were high enough to warrant increasing the ventilation at the wet bench. Respirable free silica (14808607) levels were well controlled in the polishing room, suggesting low potential for silica exposures in this area. The authors recommend that the following measures be instituted: environmental monitoring, medical surveillance, posting of exposure areas, personal protective equipment and work clothing, employee training, work practices, sanitation practices and record keeping.
• Subjects:
  Accidents, Occupational Asbestos Dust Inorganic Chemicals Laboratories Lung Lung Diseases Neoplasms Occupational Exposure Occupational Health Respiratory System Respiratory Tract Diseases Safety Smokers Tobacco Products

  More +
• Keywords:
  Arsenic-compounds Control-technology Field-Study Inorganic-acids NIOSH-Author NIOSH-Survey Occupational-exposure Region-6 Semiconductors
• DOI:
  https://doi.org/10.26616/NIOSHECTB16315b
• Publisher:
  National Institute for Occupational Safety and Health
• Document Type:
  Text
• Genre:
  Field Studies ; Control Technology
• Place as Subject:
  Ohio ; OSHA Region 5 ; OSHA Region 6 ; Texas
• CIO:
  National Institute for Occupational Safety and Health (NIOSH)
• Division:
  DPSE - Division of Physical Sciences and Engineering
• Topic:
  Workplace Safety & Health
• Location:
  North America
• Pages in Document:
  1-33
• NIOSHTIC Number:
  nn:00220825
• Citation:
  Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control and Prevention, National Institute for Occupational Safety and Health, ECTB 163-15b, 1994 Jun; :1-33
• CAS Registry Number:
  Arsenic (CAS RN 7440-38-2) ; Arsine (CAS RN 7784-42-1) ; Hydrochloric acid (CAS RN 7647-01-0) ; Quartz (SiO2) (CAS RN 14808-60-7)
• Federal Fiscal Year:
  1994
• Peer Reviewed:
  False
• NAICS and SIC Codes:
  3674 - Semiconductors and related devices - (SIC)
• Collection(s):
  National Institute for Occupational Safety and Health
• Main Document Checksum:
  urn:sha-512:2ce3508a067f9f22d91af2c33aedf25faf5f421ec693fbbdaf0413a50be8e09f8aba3ef13300eba19ada13f95b8c0c9de5ad490fc50eb4e54c40e06078d49d97
• Download URL:
  https://stacks.cdc.gov/view/cdc/180881/cdc_180881_DS1.pdf
• File Type:
  [PDF - 782.62 KB ]