Studies of Hot Photoluminescence in Plasmonically
Coupled Silicon via Variable Energy Excitation and Temperature-Dependent
Spectroscopy

Aspetti, Carlos
O.; Cho, Chang-Hee; Agarwal, Rahul; Agarwal, Ritesh

doi:10.1021/nl502606q

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Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

Published Date:

Aug 18 2014

Publisher's site:

http://dx.doi.org/10.1021/nl502606q

Source:

Nano Lett. 2014; 14(9):5413-5422.

[PDF-3.39 MB]

Details:

Alternative Title:

Nano Lett

Personal Author:

Aspetti, Carlos O. ; Cho, Chang-Hee ; Agarwal, Rahul ; Agarwal, Ritesh ;

Description:

By integrating silicon nanowires (∼150 nm diameter, 20 μm length) with an Ω-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process.

Subject:

[+]

Pubmed ID:

25120156

Pubmed Central ID:

PMC4160267

Document Type:

Journal Article

Funding:

1-DP2-7251-01/DP/NCCDPHP CDC HHS/United States ; DP2 OD007251/OD/NIH HHS/United States ;

Collection(s):

CDC Public Access

Main Document Checksum:

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Supporting Files:

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Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy

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