Safety and environmental control systems used in chemical vapor deposition (CVD) reactors at AT and T-Microelectronics, Reading, Pennsylvania.

Details

• Personal Author:
  Mattera VD Jr. ; Rhoades BJ ; Sands DG ; Mattera VD Jr. ; Rhoades BJ ; Sands DG
• Description:
  The chemical vapor deposition (CVD) process being used in the production of photonic materials made from alloys of indium (7440746), gallium (7440553), arsenic (7440382), and phosphorus (7723140) at the AT-and-T Microelectronics Facility in Reading, Pennsylvania was described. The CVD system is made up of five sections: the bubbler loading zone, the substrate loading zone, the gas inject area, the vent treatment area, and the furnace area, each located in separate partitions. Precautions to employ when in the area of the bubbler loader were noted. The CVD reactor uses arsenic- trichloride (7784341) and phosphorus-trichloride (7719122) supplied in 100 gram glass ampoules. Inhalation exposure may damage the mucous membranes of the respiratory tract and cause nervous and circulatory system disorders. Exposure internally damages abdominal organs and causes skin and vascular changes. Skin contact can result in burns. Spills of arsenic-trichloride are treated with water which reacts to form the less corrosive arsenious-oxide. The floor drain valves are automatically opened when the water nozzle is turned on. Steps used in the control of the reactor are delineated including the safety logic used to maintain safe operating conditions in the reactor even if the microprocessor fails or is programmed incorrectly. Air scrubbing systems for the CVD reactors remove particulates and toxic gases. [Description provided by NIOSH]
• Subjects:
  Accident Prevention Accidents Arsenic Hazardous Substances Inorganic Chemicals Occupational Health Phosphorous Compounds Safety Semiconductors
• Keywords:
  Semiconductors; Electronics-industry; Accident-prevention; Toxic-gases; Arsenic-compounds; Phosphorus-compounds; Control-technology; Safety-practices
• Document Type:
  Text
• Genre:
  Proceedings ; Proceedings
• Place as Subject:
  Michigan ; OSHA Region 3 ; OSHA Region 5 ; Pennsylvania
• CIO:
  National Institute for Occupational Safety and Health (NIOSH) ; National Institute for Occupational Safety and Health (NIOSH)
• Topic:
  Workplace Safety & Health ; Workplace Safety & Health
• Location:
  North America ; North America
• Pages in Document:
  203-212
• NIOSHTIC Number:
  nn:00189066
• Citation:
  Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan 1989:203-212
• CAS Registry Number:
  Arsenic (CAS RN 7440-38-2) ; Arsenic chloride (AsCl3) (CAS RN 7784-34-1) ; Gallium (CAS RN 7440-55-3) ; Indium (CAS RN 7440-74-6) ; Phosphorus (CAS RN 7723-14-0) ; Phosphorus trichloride (CAS RN 7719-12-2) ; Arsenic (CAS RN 7440-38-2) ; Arsenic chloride (AsCl3) (CAS RN 7784-34-1) ; Gallium (CAS RN 7440-55-3) ; Indium (CAS RN 7440-74-6) ; Phosphorus (CAS RN 7723-14-0) ; Phosphorus trichloride (CAS RN 7719-12-2)
• Federal Fiscal Year:
  1989
• NORA Priority Area:
  Research Tools and Approaches: Control Technology and Personal Protective Equipment ; Research Tools and Approaches: Control Technology and Personal Protective Equipment
• Peer Reviewed:
  False
• Source Full Name:
  Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan
• Collection(s):
  National Institute for Occupational Safety and Health
• Main Document Checksum:
  urn:sha-512:7dc847c09aedf140bc731323e8446b4703641ae07d6ad9e7b7238120dab30b8f7dcaa9b938d34d035f87873a0fe7fec262d5d13dcaf290925445e82b6de3b57d
• Download URL:
  https://stacks.cdc.gov/view/cdc/242838/cdc_242838_DS1.pdf
• File Type:
  [PDF - 168.02 KB ]