Diffusion and Deposition Furnaces: Hazard Control Systems
Public Domain
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1989/01/01
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Description:In the semiconductor industry, open atmosphere furnace systems have been used during wafer fabrication to deposit dopant gases for junction formation, to create an oxide layer, and to achieve other surface effects. Hazards which are a part of this operation were discussed, including hydrogen fires and explosions; electrical shock; airborne exposure to dopant gas, hydrogen-chloride (7647010), and phosgene (75445) furnace emissions; and exposure to inorganic acid mixtures during quartzware cleaning operations. The furnaces were normally located in the clean room environment to prevent surface contamination of the wafers. The operator controlled the furnace from a control panel located at the load end of the furnace. A listing of materials used for the oxidation, deposition, and diffusion processes was included. Various hazard control systems protected employees and prevented fires and other damages which might occur. Special precautions taken to provide fire safety, protection from dopant mixtures, to be used in tube cleaning and conditioning, and for the treatment of shock and thermal burns were described. No single control made the entire system safe. Instead, each individual control was an example of the engineering applications in the total system as they were involved in the semiconductor industry. [Description provided by NIOSH]
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Pages in Document:227-240
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NIOSHTIC Number:nn:00189068
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Citation:Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan 1989:227-240
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Federal Fiscal Year:1989
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Peer Reviewed:False
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Source Full Name:Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan
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Main Document Checksum:urn:sha-512:a442fa50545584e754d5cdc9ce96b2bee4fc5ed4d2be62796765cab575153672baac604195cb541473cdb53214a419353e1105f2279c47de7c242f216ab0a3cf
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