Preliminary survey report: control technology for gallium arsenide processing at Texas Instruments, Dallas, Texas.
Public Domain
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1988/02/01
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By Lenihan KL
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Personal Author:
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Description:A study was conducted at Texas Instruments (SIC-3674), Dallas, Texas, to evaluate the technology currently available for controlling gallium-arsenide (1303000) (GaAs) dusts in the semiconductor industry. At this facility, GaAs optoelectronic devices were produced along with monolithic microwave integrated circuits and field effect transistors in low volume quantities. Hazardous chemicals used included methanol (67561), ammonia (7664417), silane (7803625), hydrochloric-acid (7647010), nitric- acid (7697372), hydrofluoric-acid (7664393), sulfuric-acid (7664939), chromic-acid (1333820), silicon-tetrafluoride (7783611), tellurium (13494809), and cadmium-telluride (1306258). A localized exhaust was being designed at this facility for cleaning crystal pullers. To clean the beryllium implanter saws, a dry bead blaster was employed. Chemical fume hoods were used in the production areas with 100 linear feet per minute being the minimum face velocity at 2 inches above the work surface. The minimum face velocity on the exhaust hoods for cleaning the ion implant source areas was 125 linear feet per minute. The coolant catch basin at the sawing or slicing operation for GaAs wafers was enclosed with a rubber skirting. A general summary of work practices, monitoring, and personal protective equipment was included. The author concludes that some useful control measures are employed at this facility for limiting the potential exposures.
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Pages in Document:1-8
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NIOSHTIC Number:nn:00179880
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Citation:Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control, National Institute for Occupational Safety and Health, ECTB 163-16a, 1988 Feb; :1-8
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CAS Registry Number:Gallium arsenide (CAS RN 1303-00-0) ; Methanol (CAS RN 67-56-1) ; Ammonia (CAS RN 7664-41-7) ; Silane (CAS RN 7803-62-5) ; Hydrochloric acid (CAS RN 7647-01-0) ; Nitric acid (CAS RN 7697-37-2) ; Hydrofluoric acid (CAS RN 7664-39-3) ; Sulfuric acid (CAS RN 7664-93-9) ; Chromic trioxide (CAS RN 1333-82-0) ; Silicon tetrafluoride (CAS RN 7783-61-1) ; Tellurium (CAS RN 13494-80-9) ; Cadmium telluride (CAS RN 1306-25-8)
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Federal Fiscal Year:1988
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Peer Reviewed:False
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Main Document Checksum:urn:sha-512:aa16d0c26befe7c9a0b4afeb3fcf7ed36c13d85376c24892499cbf3d5d4ad7151ed675d2db471f04482c8380abb73370bc6248f62e161928af344f7351784f47
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